Study of dry oxidation of triangle-shaped silicon nanostructure
نویسندگان
چکیده
Silicon nanostructures along @011# direction with upside down triangle cross sections on the top of the sawtooth structure with ~111! facets are prepared by using the lithography technique, reactive ion etching, and anisotropic wet chemical etching. These triangle-shaped silicon nanostructures are thermally oxidized in dry oxygen over a range of temperature from 850 to 1000 °C, which is characterized by scanning electron microscopy. The self-limiting oxidation phenomenon observed in silicon nanostructures is discussed. Cross-sectional shape change of the silicon nanostructure under different oxidation temperatures is demonstrated. A silicon quantum wire is successfully fabricated by two-step thermal oxidation of the silicon nanostructures. © 1996 American Institute of Physics. @S0003-6951~96!03038-0#
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